gate contact การใช้

• Device fabrication begins by first wrapping CNTs in a gate dielectric and gate contact via atomic layer deposition.
• The source, drain, and gate contacts are then deposited onto the CNT ends and the metallic outer gate wrapping.
• If this rating is exceeded, the area of the device nearest the gate contacts will overheat and melt from over current.
• Most trench contacts were short lines oriented parallel to the gates covering diffusion, while gate contacts where even shorter lines oriented perpendicular to the gates.
• The mercury probe forms a gate contact and enables measurement of the capacitance-voltage or current-voltage parameters of the mercury-oxide-semiconductor structure.
• A possible application would be, for example, dividing the contact layer into two separate groups : gate contacts and source / drain contacts, each defining its own mask.
• Arrays of top-gated CNTFETs can be fabricated on the same wafer, since the gate contacts are electrically isolated from each other, unlike in the back-gated case.
• Here the source and drain electrodes are directly deposited onto the conducting channel ( a thin layer of semiconductor ) then a thin film of insulator is deposited between the semiconductor and the metal gate contact.
• The JFET is a long channel of semiconductor material, pn-junction is formed on one or both sides of the channel, or surrounding it, using a region with doping opposite to that of the channel, and biased using an ohmic gate contact ( G ).